SKU:89577968300
Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 1-5 ohm.cm
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 1-5 ohm.cmGe Wafer Specification Growing Method: CZ Orientation: (110) + _0. 5 Deg Wafer Size: 2" dia x 500 microns Surface finish (RMS or Ra) : Two sides optical polished < 30A Doping: Sb doped Conductor type: N type Resistivity: 1 5 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A Density:
If using one jar
4 inch dia SiO2/ Si wafer (Prime Grade)
Loading Current: 3A
250ml SS304 Jar
To build a DIY electrospinning system
7826Kcal/h
Coercivity: 84 Oe
8x25ml Hi-throughput Jar
Orientation: C-axis[0001]( +/-0
Lithium Solid State or Li-ion half cell will be assembled
Install digital pressure gauge & controller on the tube flange
Processing Tube Separately) & Tube Adapter
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